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    WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
    semiconductor device. All of the device s electrical characteristics are warranted when the device is
    operated within these ranges.
    Always use semiconductor devices within their recommended operating condition ranges. Operation
    outside these ranges may adversely affect reliability and could result in device failure.
    No warranty is made with respect to uses, operating conditions, or combinations not represented on
    the data sheet. Users considering application outside the listed conditions are advised to contact their
    FUJITSU representatives beforehand.
    23
    MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
    MAXIMUM OVERSHOOT
    20 ns 20 ns
    +0.8 V
     0.5 V
     2.0 V
    20 ns
    Figure 1 Maximum Negative Overshoot Waveform
    20 ns
    VCC+2.0 V
    VCC+0.5 V
    +2.0 V
    20 ns 20 ns
    Figure 2 Maximum Positive Overshoot Waveform 1
    20 ns
    +14.0 V
    +13.0 V
    VCC+0.5 V
    20 ns 20 ns
    Note: This waveform is applied for A9, OE, and RESET.
    Figure 3 Maximum Positive Overshoot Waveform 2
    24
    MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
    DC CHARACTERISTICS
    Parameter
    Parameter Description Test Conditions Min. Max. Unit
    Symbol
    ILI Input Leakage Current VIN = VSS to VCC, VCC = VCC Max.  1.0 +1.0 A
    ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC Max.  1.0 +1.0 A
    A9, OE, RESET Inputs Leakage VCC = VCC Max.
    ILIT  50 A
    Current A9, OE, RESET = 12.5 V
    Byte 38
    ICC1 VCC Active Current (Note 1) CE = VIL, OE = VIH  mA
    Word 45
    ICC2 VCC Active Current (Note 2) CE = VIL, OE = VIH  50 mA
    VCC = VCC Max., CE = VIH,
     1 mA
    RESET = VIH
    ICC3 VCC Current (Standby)
    VCC = VCC Max., CE = VCC 0.3 V,
     5 A
    RESET = VCC 0.3 V
    VCC = VCC Max.,
     1 mA
    RESET = VIL
    ICC4 VCC Current (Standby, Reset)
    VCC = VCC Max.,
     5 A
    RESET = VSS 0.3 V
    VIL Input Low Level   0.5 0.8 V
    VIH Input High Level  2.0 VCC + 0.5 V
    Voltage for Autoselect and
    VID Sector Protection  11.5 12.5 V
    (A9, OE, RESET) (Note 3, 4)
    VOL Output Low Voltage Level IOL = 5.8mA, VCC = VCC Min.  0.45 V
    VOH1 IOH =  2.5 mA, VCC = VCC Min. 2.4  V
    Output High Voltage Level
    VOH2 IOH =  100 A VCC  0.4  V
    VLKO Low VCC Lock-Out Voltage  3.2 4.2 V
    Notes: 1. The ICC current listed includes both the DC operating current and the frequency dependent component
    (at 6 MHz). The frequency component typically is 2 mA/MHz, with OE at VIH.
    2. ICC active while Embedded Algorithm (program or erase) is in progress.
    3. Applicable to sector protection function.
    4. (VID  VCC) do not exceed 9 V.
    25
    MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
    AC CHARACTERISTICS
    " Read Only Operations Characteristics
    Parameter
    MBM29F800TA/BA
    Symbols
    Description Test Setup Unit
    -55 -70 -90
    JEDEC Standard
    (Note1) (Note2) (Note2)
    tAVAV tRC Read Cycle Time  Min. 55 70 90 ns
    CE = VIL
    tAVQV tACC Address to Output Delay Max. 55 70 90 ns
    OE = VIL
    tELQV tCE Chip Enable to Output Delay OE = VIL Max. 55 70 90 ns
    tGLQV tOE Output Enable to Output Delay  Max. 30 30 40 ns
    tEHQZ tDF Chip Enable to Output High-Z  Max. 15 20 20 ns
    tGHQZ tDF Output Enable to Output High-Z  Max. 15 20 20 ns
    Output Hold Time From
    tAXQX tOH  Min. 0 0 0 ns
    Addresses, CE or OE, Whichever
    Occurs First
     tREADY RESET Pin Low to Read Mode  Max. 20 20 20 s
    tELFL CE or BYTE Switching Low or
      Max. 5 5 5 ns
    tELFH High
    Note: 2. Test Conditions:
    Note: 1. Test Conditions:
    Output Load: 1 TTL gate and 100 pF
    Output Load: 1 TTL gate and 30 pF
    Input rise and fall times: 5 ns
    Input rise and fall times: 5 ns
    Input pulse levels: 0.45 V to 2.4 V
    Input pulse levels: 0.0 V to 3.0 V
    Timing measurement reference level
    Timing measurement reference level
    Input: 0.8 V and 2.0 V
    Input: 1.5 V
    Output: 0.8 V and 2.0 V
    Output: 1.5 V
    5.0 V
    IN3064
    2.7 k&!
    or Equivalent
    Device
    Under
    Test
    6.2 k&!
    CL
    Diodes = IN3064
    or Equivalent
    Notes: 1. CL = 30 pF including jig capacitance (MBM29F800TA/BA-55)
    2. CL = 100 pF including jig capacitance (MBM29F800TA/BA-70/-90)
    Figure 4 Test Conditions
    26
    MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
    " Write/Erase/Program Operations
    Parameter Symbols MBM28F800TA/BA
    Description Unit
    JEDEC Standard -55 -70 -90
    tAVAV tWC Write Cycle Time Min. 55 70 90 ns
    tAVWL tAS Address Setup Time Min. 0 0 0 ns
    tWLAX tAH Address Hold Time Min. 40 45 45 ns
    tDVWH tDS Data Setup Time Min. 25 30 45 ns
    tWHDX tDH Data Hold Time Min. 0 0 0 ns [ Pobierz całość w formacie PDF ]

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